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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 605-611

Formation and oxidation properties of (Ti1-xAlx)N thin films prepared by dc reactive sputtering

(5) Matsui, Y a Hiratani, M a Nakamura, Y b Asano, I b Yano, F a

a HITACHI LTD (Japan)

b Elpida Memory Inc (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPOSITION; DIFFUSION; FILM GROWTH; FILM PREPARATION; MIM DEVICES; OXIDATION; OXIDATION RESISTANCE; PHASE SEPARATION; SPUTTER DEPOSITION; THIN FILMS;

FOUR PROBE METHOD; METAL INSULATOR METAL CAPACITORS; NITRIDE MODE SPUTTERING; OXIDATION RATE; REACTIVE SPUTTERING;

NITRIDES;

EID: 0036565339 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1458949 Document Type: Article

Times cited : (15)

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