Fabrication and characterization of a SiGe double quantum dot structure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2852-2855

  Qin, H ^a   Yasin, Shazia ^a   Williams, D A ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; DATA PROCESSING; ELECTRIC CHARGE; ELECTRON BEAM LITHOGRAPHY; FREQUENCIES; LITHOGRAPHY; LSI CIRCUITS; MOS DEVICES; NANOTECHNOLOGY; OXIDATION; REACTIVE ION ETCHING; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON SPIN; NANOELECTRONICS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0942289219     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1621659     Document Type: Conference Paper

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