Single-electron transistor based on modulation-doped SiGe heterostructures

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 302-304

  Notargiacomo, A ^a   Di Gaspare, L ^a   Scappucci, G ^a   Mariottini, G ^a   Evangelisti, F ^a   Giovine, E ^b   Leoni, R ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; SILICON COMPOUNDS; TRANSISTORS;

SINGLE ELECTRON TRANSISTORS (SET);

HETEROJUNCTIONS;

EID: 0042769333     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592883     Document Type: Article

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