Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1047-1050

  Wieser, U ^a   Kunze, U ^a   Ismail, K ^b   Chu, J O ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Electron beam lithography; Quantum point contact; SiGe; Wet chemical ethcing

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ETCHING; HETEROJUNCTIONS; QUANTUM ELECTRONICS; QUANTUM THEORY; TRANSISTORS;

QUANTUM POINT CONTACTS (QPC); WET-CHEMICAL ETCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036492890     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00299-0     Document Type: Article

References (13)