Schottky gating high mobility Si/Si1-xGex 2D electron systems

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 316-319

  Dunford, R B ^a   Griffin, N ^a   Paul, D J ^a   Pepper, M ^a   Robbins, D J ^b   Churchill, A C ^b   Leong, W Y ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS;

ELECTRON SYSTEMS; ENERGY LEVEL BROADENING; MODULATION DOPING; SCHOTTKY GATING;

SEMICONDUCTING FILMS;

EID: 0034228550     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00871-3     Document Type: Article

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