-
1
-
-
0000793139
-
Cramming more components onto integrated circuits
-
April 19
-
Gordon Moore, "Cramming more components onto integrated circuits," Electronics, vol. 38, no. 8, pp. 114-117, April 19, 1965.
-
(1965)
Electronics
, vol.38
, Issue.8
, pp. 114-117
-
-
Moore, G.1
-
2
-
-
0038645647
-
No exponential is forever: But 'forever' can be delayed!
-
Feb.
-
Gordon Moore, "No Exponential is Forever: But 'Forever' Can Be Delayed!," ISSCC Dig. Tech. Papers, pp. 20-23, Feb., 2003.
-
(2003)
ISSCC Dig. Tech. Papers
, pp. 20-23
-
-
Moore, G.1
-
3
-
-
28144455745
-
Flash memory applications and markets: 2004-2009
-
Sept.
-
Alan Niebel, "Flash Memory Applications and Markets: 2004-2009," Web-Feet Research Inc., Sept., 2004.
-
(2004)
Web-Feet Research Inc.
-
-
Niebel, A.1
-
4
-
-
28144449813
-
Worldwide WLAN-enabled mobile device 2004-2008 forecast and analysis
-
Oct.
-
Alex Slawsby, "Worldwide WLAN-Enabled Mobile Device 2004-2008 Forecast and Analysis," IDC Doc. #32095, Oct., 2004.
-
(2004)
IDC Doc. #32095
-
-
Slawsby, A.1
-
6
-
-
0035054933
-
Microprocessors for the new millenium: Challenges, opportunities, and new frontiers
-
Feb.
-
Pat Gelsinger, "Microprocessors for the New Millenium: Challenges, Opportunities, and New Frontiers," ISSCC Dig. Tech. Papers, pp. 22-25, Feb., 2001.
-
(2001)
ISSCC Dig. Tech. Papers
, pp. 22-25
-
-
Gelsinger, P.1
-
7
-
-
28144441409
-
The implementation of a 2-core multi-threaded itanium®-family processor
-
Paper 10.1, Feb.
-
S. Naffziger, T. Grutkowski, B. Stackhouse, "The Implementation of a 2-Core Multi-Threaded Itanium®-Family Processor," ISSCC Dig. Tech. Papers, Paper 10.1, pp. 182-183, Feb., 2005.
-
(2005)
ISSCC Dig. Tech. Papers
, pp. 182-183
-
-
Naffziger, S.1
Grutkowski, T.2
Stackhouse, B.3
-
9
-
-
0035341885
-
Reconfigurable computing for digital signal processing: A survey
-
R. Tessier and W. Burleson, "Reconfigurable Computing for Digital Signal Processing: A Survey," J. VLSI Signal Processing 28, pp. 7-27, 2001.
-
(2001)
J. VLSI Signal Processing
, vol.28
, pp. 7-27
-
-
Tessier, R.1
Burleson, W.2
-
10
-
-
34047170223
-
Mobile PC platforms enabled with intel® centrino™ mobile technology
-
May
-
G. Chinn, S. Desai, E. DiStafano, K. Ravichandran, and S. Thakkar, "Mobile PC Platforms Enabled with Intel® Centrino™ Mobile Technology," Intel Technology Journal, pp. 6-15, May, 2003.
-
(2003)
Intel Technology Journal
, pp. 6-15
-
-
Chinn, G.1
Desai, S.2
DiStafano, E.3
Ravichandran, K.4
Thakkar, S.5
-
12
-
-
0038233833
-
Nanotechnology goals and challenges for electronic applications
-
March
-
M. Bohr, "Nanotechnology Goals and Challenges for Electronic Applications," IEEE Transactions on Nanotechnology, vol. 1, no. 1, p. 56, March, 2002.
-
(2002)
IEEE Transactions on Nanotechnology
, vol.1
, Issue.1
, pp. 56
-
-
Bohr, M.1
-
13
-
-
4544357717
-
Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology
-
June
-
K. Mistry, M. Armstrong, C. Auth, et al., "Delaying Forever: Uniaxial Strained Silicon Transistors in a 90nm CMOS Technology," Symp. VLSI Tech., pp.50-51, June, 2004.
-
(2004)
Symp. VLSI Tech.
, pp. 50-51
-
-
Mistry, K.1
Armstrong, M.2
Auth, C.3
-
15
-
-
0141761518
-
Tri-gate fully-depleted CMOS transistors: Fabrication, design and layout
-
June
-
B. Doyle, B. Boyanov, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, R. Rios, R. Chau, "Tri-Gate Fully-Depleted CMOS Transistors: Fabrication, Design and Layout," Symp. VLSI Technology, pp. 133-134, June, 2003.
-
(2003)
Symp. VLSI Technology
, pp. 133-134
-
-
Doyle, B.1
Boyanov, B.2
Datta, S.3
Doczy, M.4
Hareland, S.5
Jin, B.6
Kavalieros, J.7
Linton, T.8
Rios, R.9
Chau, R.10
-
16
-
-
28144446330
-
The mechanical side of ultra-low k: Can it take the strain?
-
June 21
-
B. Chandran, R. Mahajan, M. Bohr, C. Jan, Q. Vu, "The Mechanical Side of Ultra-Low k: Can it Take the Strain?," Future Fab Intl., vol. 17, pp. 121-124, June 21, 2004.
-
(2004)
Future Fab Intl.
, vol.17
, pp. 121-124
-
-
Chandran, B.1
Mahajan, R.2
Bohr, M.3
Jan, C.4
Vu, Q.5
-
17
-
-
0029359285
-
1-V power supply high-speed digital circuit technology with multi-threshold-voltage CMOS
-
S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, S. Shigematsu and J. Yamada, "1-V Power Supply High-Speed Digital Circuit Technology with Multi-threshold-Voltage CMOS," IEEE J. Solid-State Circuits, vol. 8, no. 30, pp. 847-854, 1995.
-
(1995)
IEEE J. Solid-state Circuits
, vol.8
, Issue.30
, pp. 847-854
-
-
Mutoh, S.1
Douseki, T.2
Matsuya, Y.3
Aoki, T.4
Shigematsu, S.5
Yamada, J.6
-
18
-
-
21644486110
-
Circuit techniques for subthreshold leakage avoidance, control, and tolerance
-
Dec.
-
S. Borkar, "Circuit Techniques for Subthreshold Leakage Avoidance, Control, and Tolerance," IEDM Tech. Dig., pp. 421-424, Dec., 2004.
-
(2004)
IEDM Tech. Dig.
, pp. 421-424
-
-
Borkar, S.1
-
19
-
-
0034867611
-
Scaling of stack effect and its application for leakage reduction
-
Aug. 6-7
-
S. Narendra, S. Borkar, V. De, D. Antoniadis, A. Chandrakasan, "Scaling of Stack Effect and its Application for Leakage Reduction," International Symposium on Low Power Electronics and Devices, pp. 195-200, Aug. 6-7, 2001.
-
(2001)
International Symposium on Low Power Electronics and Devices
, pp. 195-200
-
-
Narendra, S.1
Borkar, S.2
De, V.3
Antoniadis, D.4
Chandrakasan, A.5
-
20
-
-
4544226086
-
An SRAM design on 65nm CMOS technology with integrated leakage reduction scheme
-
June
-
K. Zhang, U. Bhattacharya, Z. Chen, et al., "An SRAM Design on 65nm CMOS Technology with Integrated Leakage Reduction Scheme," Symp. VLSI Circuits, pp. 294-295, June, 2004.
-
(2004)
Symp. VLSI Circuits
, pp. 294-295
-
-
Zhang, K.1
Bhattacharya, U.2
Chen, Z.3
-
21
-
-
28144454581
-
A 3-GHz 70Mb SRAM in 65nm CMOS technology with integrated column-based dynamic power supply
-
Paper 26.1, Feb.
-
K. Zhang, U. Bhattacharya, Z. Chen, et al., "A 3-GHz 70Mb SRAM in 65nm CMOS Technology with Integrated Column-Based Dynamic Power Supply," ISSCC Dig. Tech. Papers, Paper 26.1, pp. 474-475, Feb., 2005.
-
(2005)
ISSCC Dig. Tech. Papers
, pp. 474-475
-
-
Zhang, K.1
Bhattacharya, U.2
Chen, Z.3
-
22
-
-
0026853681
-
Low-power CMOS digital design
-
April
-
A. Chandrakasan, S. Sheng, and R. W. Brodersen, "Low-power CMOS digital design," IEEE J. Solid-State Circuits, vol. 27, pp. 473-484, April 1992.
-
(1992)
IEEE J. Solid-state Circuits
, vol.27
, pp. 473-484
-
-
Chandrakasan, A.1
Sheng, S.2
Brodersen, R.W.3
-
23
-
-
4544385361
-
A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications
-
June
-
K. Kuhn, R. Basco, D. Becher, M. Hattendorf, P. Packan, I. Post, P. Vandervoorn, I. Young, "A Comparison of State-of-the-Art NMOS and SiGe HBT Devices for Analog/Mixed-signal/RF Circuit Applications," Symp. VLSI Circuits, pp. 224-225, June, 2004.
-
(2004)
Symp. VLSI Circuits
, pp. 224-225
-
-
Kuhn, K.1
Basco, R.2
Becher, D.3
Hattendorf, M.4
Packan, P.5
Post, I.6
Vandervoorn, P.7
Young, I.8
-
24
-
-
0024124005
-
The design of sigma-delta modulation analog-to-digital converters
-
December
-
B. Boser, B. Wooley, "The Design of Sigma-Delta Modulation Analog-to-Digital Converters," IEEE J. Solid-State Circuits, vol. 23, no. 6, pp. 1298-1308, December 1988.
-
(1988)
IEEE J. Solid-state Circuits
, vol.23
, Issue.6
, pp. 1298-1308
-
-
Boser, B.1
Wooley, B.2
-
26
-
-
84945118974
-
-
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765). Piscataway, NJ, USA: IEEE
-
K Kukli, "Atomic Layer Deposition Chemistry, Mechanisms and Related Physical Properties of High Permittivity Dielectric Oxides," Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765). Piscataway, NJ, USA: IEEE, pp. 106-111, 2003.
-
(2003)
Atomic Layer Deposition Chemistry, Mechanisms and Related Physical Properties of High Permittivity Dielectric Oxides
, pp. 106-111
-
-
Kukli, K.1
-
27
-
-
19144364132
-
Self-assembled carbon-nanotube-based field-effect transistors
-
M. Hazani, D. Shvarts, D. Peled, V. Sidorov, and R. Naaman, "Self-Assembled Carbon-Nanotube-Based Field-Effect Transistors," Applied Physics Letters, vol. 85, no. 21, pp. 5025 - 5027, 2004.
-
(2004)
Applied Physics Letters
, vol.85
, Issue.21
, pp. 5025-5027
-
-
Hazani, M.1
Shvarts, D.2
Peled, D.3
Sidorov, V.4
Naaman, R.5
-
28
-
-
0032498174
-
A laser ablation method for the synthesis of crystalline semiconductor nanowires
-
A. M. Morales and C. M. Lieber, "A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires," Science, 279(5348): pp. 208-211, 1998.
-
(1998)
Science
, vol.279
, Issue.5348
, pp. 208-211
-
-
Morales, A.M.1
Lieber, C.M.2
-
29
-
-
21744442652
-
Novel InSb-based quantum well transistors for ultra-high speed, low power logic applications
-
Oct. 18-21
-
T. Ashley, A.R. Barnes, L. Buckle, et al, "Novel InSb-Based Quantum Well Transistors for Ultra-High Speed, Low Power Logic Applications," 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, Beijing, China, pp. 2253-2256, Oct. 18-21, 2004.
-
(2004)
7th International Conference on Solid-state and Integrated Circuits Technology Proceedings, Beijing, China
, pp. 2253-2256
-
-
Ashley, T.1
Barnes, A.R.2
Buckle, L.3
-
30
-
-
0035900398
-
Spintronics: A spin-based electronics vision for the future
-
Nov.
-
S. Wolf, D. Awschalom, R. Buhrman, et al., "Spintronics: A Spin-Based Electronics Vision for the Future," Science vol. 294, pp. 1489-1495, Nov., 2001.
-
(2001)
Science
, vol.294
, pp. 1489-1495
-
-
Wolf, S.1
Awschalom, D.2
Buhrman, R.3
-
32
-
-
0038645356
-
512Mb PROM with 8 layers of antifuse/diode cells
-
Feb.
-
M. Crowley, A. Al-Shamma, D. Bosch, et al, "512Mb PROM with 8 layers of Antifuse/Diode Cells," ISSCC Dig. Tech. Papers, pp. 284-285, Feb., 2003.
-
(2003)
ISSCC Dig. Tech. Papers
, pp. 284-285
-
-
Crowley, M.1
Al-Shamma, A.2
Bosch, D.3
|