-
2
-
-
0033752184
-
Reliability: A possible showstopper for oxide thickness scaling?
-
R. Degraeve, B. Kaczer, and G. Groeseneken, "Reliability: a possible showstopper for oxide thickness scaling?," Semicond. Sci. Technol., vol. 15, pp. 436-444, 2000.
-
(2000)
Semicond. Sci. Technol.
, vol.15
, pp. 436-444
-
-
Degraeve, R.1
Kaczer, B.2
Groeseneken, G.3
-
3
-
-
0000637882
-
Physics and prospects of sub-2nm oxides
-
H. Z. Massoud, I. J. R. Baumvol, M. Hirose, and E. H. Poindexter, Eds. Pennington, NJ: The Electrochemical Society
-
2 Interface - 4, vol. 2000-2, H. Z. Massoud, I. J. R. Baumvol, M. Hirose, and E. H. Poindexter, Eds. Pennington, NJ: The Electrochemical Society, 2000, pp. 365-376.
-
(2000)
2 Interface - 4
, vol.2000
, Issue.2
, pp. 365-376
-
-
Alam, M.A.1
-
4
-
-
0036508455
-
Reliability limits for the gate insulator in CMOS technology
-
J. H. Stathis, "Reliability limits for the gate insulator in CMOS technology," IBM J. Res. Develop., vol. 46, pp. 265-286, 2002.
-
(2002)
IBM J. Res. Develop.
, vol.46
, pp. 265-286
-
-
Stathis, J.H.1
-
5
-
-
0036508417
-
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
-
E. Y. Wu, E. J. Nowak, A. Vayshenker, W. L. Lai, and D. Harmon, "CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics," IBM J. Res. Develop., vol. 46, pp. 287-298, 2002.
-
(2002)
IBM J. Res. Develop.
, vol.46
, pp. 287-298
-
-
Wu, E.Y.1
Nowak, E.J.2
Vayshenker, A.3
Lai, W.L.4
Harmon, D.5
-
6
-
-
0042694524
-
Reliability of ultra-thin oxides in CMOS circuits
-
J. H. Stathis, B. P. Linder, R. Rodríguez, and S. Lombardo, "Reliability of ultra-thin oxides in CMOS circuits," Microelectron. Reliab., vol. 43, p. 1353, 2003.
-
(2003)
Microelectron. Reliab.
, vol.43
, pp. 1353
-
-
Stathis, J.H.1
Linder, B.P.2
Rodríguez, R.3
Lombardo, S.4
-
7
-
-
17344378427
-
Voltge-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides
-
E. Y. Wu, et al., "Voltge-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides," Digest of the 2000 International Electron Devices Meeting, pp. 541-544, 2000.
-
(2000)
Digest of the 2000 International Electron Devices Meeting
, pp. 541-544
-
-
Wu, E.Y.1
-
8
-
-
0042991426
-
Circuit implications of gate oxide breakdown
-
J. H. Stathis, R. Rodríguez, and B. P. Linder, "Circuit implications of gate oxide breakdown," Microelectron. Reliab., vol. 43, pp. 1193-1197, 2003.
-
(2003)
Microelectron. Reliab.
, vol.43
, pp. 1193-1197
-
-
Stathis, J.H.1
Rodríguez, R.2
Linder, B.P.3
-
9
-
-
17644443481
-
Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides
-
E. Wu, J. Suñé, B. P. Linder, J. H. Stathis, and W. L. Lai, "Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides," Digest of the 2003 International Electron Devices Meeting, pp. 319-322, 2003.
-
(2003)
Digest of the 2003 International Electron Devices Meeting
, pp. 319-322
-
-
Wu, E.1
Suñé, J.2
Linder, B.P.3
Stathis, J.H.4
Lai, W.L.5
-
10
-
-
0038782425
-
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
-
F. Monsieur, et al., "A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment.," 2002 International Reliability Physics Symposium Proceedings, pp. 45-54, 2002.
-
(2002)
2002 International Reliability Physics Symposium Proceedings
, pp. 45-54
-
-
Monsieur, F.1
-
11
-
-
0036931973
-
A new model of time evolution of gate oxide leakage current after soft breakdown in ultra-thin gate oxides
-
T. Hosoi, P. Lo Re, Y. Kamakura, and K. Taniguchi, "A new model of time evolution of gate oxide leakage current after soft breakdown in ultra-thin gate oxides," Digest of the 2002 International Electron Devices Meeting, pp. 155-158, 2002.
-
(2002)
Digest of the 2002 International Electron Devices Meeting
, pp. 155-158
-
-
Hosoi, T.1
Lo Re, P.2
Kamakura, Y.3
Taniguchi, K.4
-
12
-
-
0036865481
-
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
-
B. P. Linder, S. Lombardo, J. H. Stathis, A. Vayshenker, and D. J. Frank, "Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics," IEEE Electron Device Lett., vol. 23, pp. 661-663, 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 661-663
-
-
Linder, B.P.1
Lombardo, S.2
Stathis, J.H.3
Vayshenker, A.4
Frank, D.J.5
-
13
-
-
21644473075
-
Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT-1nm) SiON films
-
B. Kaczer, R. Degraeve, R. O'Connor, P. Roussel, and G. Groeseneken, "Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT-1nm) SiON films," Digest of the 2004 International Electron Devices Meeting, pp. 713-716, 2004.
-
(2004)
Digest of the 2004 International Electron Devices Meeting
, pp. 713-716
-
-
Kaczer, B.1
Degraeve, R.2
O'Connor, R.3
Roussel, P.4
Groeseneken, G.5
-
14
-
-
0036712470
-
The impact of gate oxide breakdown on SRAM stability
-
R. Rodriguez, et al., "The impact of gate oxide breakdown on SRAM stability," IEEE Electron Device Lett., vol. 23, pp. 559-561, 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 559-561
-
-
Rodriguez, R.1
-
15
-
-
0038732515
-
A model for gate oxide breakdown in CMOS inverters
-
R. Rodriguez, J. H. Stathis, and B. P. Linder, "A model for gate oxide breakdown in CMOS inverters," IEEE Electron Device Lett., vol. 24, pp. 114-116, 2003.
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 114-116
-
-
Rodriguez, R.1
Stathis, J.H.2
Linder, B.P.3
-
16
-
-
1642634452
-
Limits of the successive breakdown statistics to assess chip reliability
-
J. Suñé, E. Wu, and W. Lai, "Limits of the successive breakdown statistics to assess chip reliability," Microelectronic Engineering, vol. 72, p. 39-44, 2004.
-
(2004)
Microelectronic Engineering
, vol.72
, pp. 39-44
-
-
Suñé, J.1
Wu, E.2
Lai, W.3
-
17
-
-
25844479330
-
Dielectric breakdown mechanisms in gate oxides
-
To be published
-
S. Lombardo, et al., "Dielectric breakdown mechanisms in gate oxides," J. Appl. Phys., To be published, 2005.
-
(2005)
J. Appl. Phys.
-
-
Lombardo, S.1
-
18
-
-
85014896062
-
Investigation of silicon-silicon dioxide interface using MOS structure
-
Y. Miura and Y. Matukura, "Investigation of silicon-silicon dioxide interface using MOS structure," Jpn. J. Appl. Phys., vol. 5, p. 180, 1966.
-
(1966)
Jpn. J. Appl. Phys.
, vol.5
, pp. 180
-
-
Miura, Y.1
Matukura, Y.2
-
19
-
-
0033725308
-
NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10μm gate CMOS generation
-
N. Kimizuka, et al., "NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10μm gate CMOS generation," Digest of the 2000 Symposium on VLSI Technology, pp. 92-93, 2000.
-
(2000)
Digest of the 2000 Symposium on VLSI Technology
, pp. 92-93
-
-
Kimizuka, N.1
-
20
-
-
0036932280
-
NBTI mechanism in ultra-thin gate dielectric: Nitrogen-originated mechanism in SiON
-
Y. Mitani, M. Nagamine, H. Satake, and A. Toriumi, "NBTI mechanism in ultra-thin gate dielectric: Nitrogen-originated mechanism in SiON," Digest of the 2002 International Electron Devices Meeting, pp. 509-512, 2002.
-
(2002)
Digest of the 2002 International Electron Devices Meeting
, pp. 509-512
-
-
Mitani, Y.1
Nagamine, M.2
Satake, H.3
Toriumi, A.4
-
21
-
-
84932111830
-
Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
-
J. H. Stathis, G. LaRosa, and A. Chou, "Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide," 2004 International Reliability Physics Symposium Proceedings, pp. 1-7, 2004.
-
(2004)
2004 International Reliability Physics Symposium Proceedings
, pp. 1-7
-
-
Stathis, J.H.1
LaRosa, G.2
Chou, A.3
-
22
-
-
10044226987
-
A thorough investigation of MOSFETs NBTI degradation
-
V. Huard, et al., "A thorough investigation of MOSFETs NBTI degradation," Microelectron. Reliab., vol. 45, pp. 83-98, 2005.
-
(2005)
Microelectron. Reliab.
, vol.45
, pp. 83-98
-
-
Huard, V.1
-
24
-
-
0033352180
-
Low voltage tunneling in ultra-thin oxides: A monitor for interface states and degradation
-
A. Ghetti, E. Sangiorgi, J. Bude, T. Sorsch, and G. Weber, "Low voltage tunneling in ultra-thin oxides: a monitor for interface states and degradation," Digest of the 1999 International Electron Devices Meeting, pp. 731-734, 1999.
-
(1999)
Digest of the 1999 International Electron Devices Meeting
, pp. 731-734
-
-
Ghetti, A.1
Sangiorgi, E.2
Bude, J.3
Sorsch, T.4
Weber, G.5
-
25
-
-
0033280060
-
The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling
-
N. Kimizuka, et al., "The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling," Digest of the 1999 Symposium on VLSI Technology, pp. 73-74, 1999.
-
(1999)
Digest of the 1999 Symposium on VLSI Technology
, pp. 73-74
-
-
Kimizuka, N.1
-
26
-
-
79956035106
-
On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures
-
F. Crupi, et al., "On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures," J. Appl. Phys., vol. 80, pp. 4597-4599, 2002.
-
(2002)
J. Appl. Phys.
, vol.80
, pp. 4597-4599
-
-
Crupi, F.1
-
27
-
-
28044450765
-
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
-
(to be published in Microelectronic Engineering), Leuven, Belgium
-
J. H. Stathis, et al., "Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates," presented at INFOS (to be published in Microelectronic Engineering), Leuven, Belgium, 2005.
-
(2005)
INFOS
-
-
Stathis, J.H.1
|