메뉴 건너뛰기




Volumn , Issue , 2005, Pages 127-130

Gate oxide reliability for nano-scale CMOS

Author keywords

[No Author keywords available]

Indexed keywords


EID: 28044471356     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (27)
  • 2
    • 0033752184 scopus 로고    scopus 로고
    • Reliability: A possible showstopper for oxide thickness scaling?
    • R. Degraeve, B. Kaczer, and G. Groeseneken, "Reliability: a possible showstopper for oxide thickness scaling?," Semicond. Sci. Technol., vol. 15, pp. 436-444, 2000.
    • (2000) Semicond. Sci. Technol. , vol.15 , pp. 436-444
    • Degraeve, R.1    Kaczer, B.2    Groeseneken, G.3
  • 3
    • 0000637882 scopus 로고    scopus 로고
    • Physics and prospects of sub-2nm oxides
    • H. Z. Massoud, I. J. R. Baumvol, M. Hirose, and E. H. Poindexter, Eds. Pennington, NJ: The Electrochemical Society
    • 2 Interface - 4, vol. 2000-2, H. Z. Massoud, I. J. R. Baumvol, M. Hirose, and E. H. Poindexter, Eds. Pennington, NJ: The Electrochemical Society, 2000, pp. 365-376.
    • (2000) 2 Interface - 4 , vol.2000 , Issue.2 , pp. 365-376
    • Alam, M.A.1
  • 4
    • 0036508455 scopus 로고    scopus 로고
    • Reliability limits for the gate insulator in CMOS technology
    • J. H. Stathis, "Reliability limits for the gate insulator in CMOS technology," IBM J. Res. Develop., vol. 46, pp. 265-286, 2002.
    • (2002) IBM J. Res. Develop. , vol.46 , pp. 265-286
    • Stathis, J.H.1
  • 5
    • 0036508417 scopus 로고    scopus 로고
    • CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
    • E. Y. Wu, E. J. Nowak, A. Vayshenker, W. L. Lai, and D. Harmon, "CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics," IBM J. Res. Develop., vol. 46, pp. 287-298, 2002.
    • (2002) IBM J. Res. Develop. , vol.46 , pp. 287-298
    • Wu, E.Y.1    Nowak, E.J.2    Vayshenker, A.3    Lai, W.L.4    Harmon, D.5
  • 7
    • 17344378427 scopus 로고    scopus 로고
    • Voltge-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides
    • E. Y. Wu, et al., "Voltge-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides," Digest of the 2000 International Electron Devices Meeting, pp. 541-544, 2000.
    • (2000) Digest of the 2000 International Electron Devices Meeting , pp. 541-544
    • Wu, E.Y.1
  • 9
    • 17644443481 scopus 로고    scopus 로고
    • Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides
    • E. Wu, J. Suñé, B. P. Linder, J. H. Stathis, and W. L. Lai, "Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides," Digest of the 2003 International Electron Devices Meeting, pp. 319-322, 2003.
    • (2003) Digest of the 2003 International Electron Devices Meeting , pp. 319-322
    • Wu, E.1    Suñé, J.2    Linder, B.P.3    Stathis, J.H.4    Lai, W.L.5
  • 10
    • 0038782425 scopus 로고    scopus 로고
    • A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
    • F. Monsieur, et al., "A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment.," 2002 International Reliability Physics Symposium Proceedings, pp. 45-54, 2002.
    • (2002) 2002 International Reliability Physics Symposium Proceedings , pp. 45-54
    • Monsieur, F.1
  • 12
    • 0036865481 scopus 로고    scopus 로고
    • Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
    • B. P. Linder, S. Lombardo, J. H. Stathis, A. Vayshenker, and D. J. Frank, "Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics," IEEE Electron Device Lett., vol. 23, pp. 661-663, 2002.
    • (2002) IEEE Electron Device Lett. , vol.23 , pp. 661-663
    • Linder, B.P.1    Lombardo, S.2    Stathis, J.H.3    Vayshenker, A.4    Frank, D.J.5
  • 14
    • 0036712470 scopus 로고    scopus 로고
    • The impact of gate oxide breakdown on SRAM stability
    • R. Rodriguez, et al., "The impact of gate oxide breakdown on SRAM stability," IEEE Electron Device Lett., vol. 23, pp. 559-561, 2002.
    • (2002) IEEE Electron Device Lett. , vol.23 , pp. 559-561
    • Rodriguez, R.1
  • 16
    • 1642634452 scopus 로고    scopus 로고
    • Limits of the successive breakdown statistics to assess chip reliability
    • J. Suñé, E. Wu, and W. Lai, "Limits of the successive breakdown statistics to assess chip reliability," Microelectronic Engineering, vol. 72, p. 39-44, 2004.
    • (2004) Microelectronic Engineering , vol.72 , pp. 39-44
    • Suñé, J.1    Wu, E.2    Lai, W.3
  • 17
    • 25844479330 scopus 로고    scopus 로고
    • Dielectric breakdown mechanisms in gate oxides
    • To be published
    • S. Lombardo, et al., "Dielectric breakdown mechanisms in gate oxides," J. Appl. Phys., To be published, 2005.
    • (2005) J. Appl. Phys.
    • Lombardo, S.1
  • 18
    • 85014896062 scopus 로고
    • Investigation of silicon-silicon dioxide interface using MOS structure
    • Y. Miura and Y. Matukura, "Investigation of silicon-silicon dioxide interface using MOS structure," Jpn. J. Appl. Phys., vol. 5, p. 180, 1966.
    • (1966) Jpn. J. Appl. Phys. , vol.5 , pp. 180
    • Miura, Y.1    Matukura, Y.2
  • 19
    • 0033725308 scopus 로고    scopus 로고
    • NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10μm gate CMOS generation
    • N. Kimizuka, et al., "NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10μm gate CMOS generation," Digest of the 2000 Symposium on VLSI Technology, pp. 92-93, 2000.
    • (2000) Digest of the 2000 Symposium on VLSI Technology , pp. 92-93
    • Kimizuka, N.1
  • 22
    • 10044226987 scopus 로고    scopus 로고
    • A thorough investigation of MOSFETs NBTI degradation
    • V. Huard, et al., "A thorough investigation of MOSFETs NBTI degradation," Microelectron. Reliab., vol. 45, pp. 83-98, 2005.
    • (2005) Microelectron. Reliab. , vol.45 , pp. 83-98
    • Huard, V.1
  • 25
    • 0033280060 scopus 로고    scopus 로고
    • The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling
    • N. Kimizuka, et al., "The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling," Digest of the 1999 Symposium on VLSI Technology, pp. 73-74, 1999.
    • (1999) Digest of the 1999 Symposium on VLSI Technology , pp. 73-74
    • Kimizuka, N.1
  • 26
    • 79956035106 scopus 로고    scopus 로고
    • On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures
    • F. Crupi, et al., "On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures," J. Appl. Phys., vol. 80, pp. 4597-4599, 2002.
    • (2002) J. Appl. Phys. , vol.80 , pp. 4597-4599
    • Crupi, F.1
  • 27
    • 28044450765 scopus 로고    scopus 로고
    • Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
    • (to be published in Microelectronic Engineering), Leuven, Belgium
    • J. H. Stathis, et al., "Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates," presented at INFOS (to be published in Microelectronic Engineering), Leuven, Belgium, 2005.
    • (2005) INFOS
    • Stathis, J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.