Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 4, 1996, Pages 2488-2492

  Firon, M ^a   Bonnelle, C ^a   Mayeux, A ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b IBM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; COMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT REFLECTION; MOLECULAR VIBRATIONS; PLASMA APPLICATIONS; POLARIZATION; REFRACTIVE INDEX; THICKNESS MEASUREMENT; THIN FILMS;

ANGLE OF INCIDENCE; FILM THICKNESS; INFRARED REFLECTION ABSORPTION SPECTROSCOPY; LONGITUDINAL OPTICAL MODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON OXYNITRIDE; VIBRATIONAL BANDS;

SILICON NITRIDE;

EID: 0030190248     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580007     Document Type: Article

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