Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

Solid-State Electronics

Volumn 49, Issue 12, 2005, Pages 1986-1989

  Song, June O ^a   Kang, Hun ^a   Ferguson, I T ^a   Jung, Sung Pyo ^b   Lee, H P ^b   Hong, Hyun Gi ^c   Lee, Takhee ^c   Seong, Tae Yeon ^c,d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Irvine   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; NICKEL; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAVIOLET RADIATION;

ELECTRICAL BEHAVIOR; NANODOTS; OUTPUT POWER;

LIGHT EMITTING DIODES;

EID: 28044446794     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.08.012     Document Type: Article

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