Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

IEEE Photonics Technology Letters

Volumn 17, Issue 2, 2005, Pages 291-293

  Song, June O ^a   Leem, Dong Seok ^a   Kwak, Joon Seop ^b   Park, Y ^b   Chae, S W ^c   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Samsung Electro Mechanics   (South Korea)

Author keywords

Ag; GaN; Indium tin oxide (ITO); Light emitting diode (LED); Ohmic contact

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; GALLIUM NITRIDE; LIGHT TRANSMISSION; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SILVER; TRANSPARENCY;

INDIUM TIN OXIDE; LUMINOUS INTENSITY;

LIGHT EMITTING DIODES;

EID: 13444261130     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.839783     Document Type: Article

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