Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 1027-1030

  Clerc, R ^a   Spinelli, A S ^b   Ghibaudo, G ^a   Leroux, C ^c   Pananakakis, G ^a  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

ULTRATHIN OXIDES;

MOS CAPACITORS;

EID: 0035393117     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00063-4     Document Type: Article

References (9)