The vacancy-donor pair in unstrained silicon, germanium and SiGe alloys

Journal of Physics Condensed Matter

Volumn 17, Issue 22, 2005, Pages

  Peaker, A R ^a   Markevich, V P ^a,b   Auret, F D ^a,c   Dobaczewski, L ^d   Abrosimov, N ^e  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c UNIVERSITY OF PRETORIA   (South Africa)

^d INSTITUTE OF PHYSICS   (Poland)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON EMISSION; ELECTRON IRRADIATION; ENERGY GAP; LAPLACE TRANSFORMS; RELIABILITY; SILICON ALLOYS;

DONOR COMPLEXES; ELECTRON ACCEPTORS; UNSTRAINED GERMANIUM;

SEMICONDUCTING SILICON;

EID: 21144436012     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/22/018     Document Type: Article

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