Defect-related growth processes at an amorphous/crystalline interface: A molecular dynamics study

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 213-218

  Weber, B ^a   Stock, D M ^a   Gartner K ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; SEMICONDUCTOR GROWTH;

BOND DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033888538     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00377-3     Document Type: Article

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