Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 796-798

  Park, Chang Seo ^a   Cho, Byung Jin ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

High ; Metal gate; Work function

Indexed keywords

COMPOSITION EFFECTS; DIELECTRIC DEVICES; FERMI LEVEL; GATES (TRANSISTOR); PERMITTIVITY; PLATINUM METALS; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

FULLY SILICIDE (FUSI) GATE; METAL GATE; SUBSTITUTED ALUMINUM (SA) GATE; WORK FUNCTION;

MOSFET DEVICES;

EID: 27744536796     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857711     Document Type: Article

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