Fully working 1.10μm2 embedded 6T-SRAM technology with high-k gate dielectric device for ultra low power applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 38-39

  Ryu, Hyuk Ju ^a   Chung, Woo Young ^a   Jang, You Jean ^a   Lee, Yong Jun ^a   Jung, Hyung Seok ^a   Oh, Chang Bong ^a   Kang, Hee Sung ^a   Kim, Young Wug ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; DIELECTRIC DEVICES; EMBEDDED SYSTEMS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; OPTIMIZATION; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

HIGH-K GATE DIELECTRIC TECHNOLOGY; OXYNITRIDES; POST DEPOSITION ANNEAL (PDA); SRAM CHIPS;

STATIC RANDOM ACCESS STORAGE;

EID: 4544276951     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. C. B. Oh et. al., VLSI Tech. Digest, 71 (2003).
2. A. Morioka et al., VLSI Tech. Digest, 165 (2003).
3. C. Hobbs et. al., VLSI Tech. Digest, 9 (2003).
4. H. S. Jung et. al., IEDM Tech. Digest, 853 (2002).