SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 7, Issue 10, 2004, Pages

Plasma nitration of HfO2 gate dielectric in nitrogen ambient for improvement of TaN/HfO2/Si performance

(3) Choi, Kyu Jeong a Kim, Jeon Ho a Yoon, Soon Gil a

a Chungnam National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLIZATION; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EQUIVALENT OXIDE THICKNESS (EOT); GATE DIELECTRIC; PLASMA NITRATION; THERMAL DEPOSITION;

HAFNIUM;

EID: 8344263093 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1795055 Document Type: Article

Times cited : (11)

References (13)

1
- 4344677715
- K. Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan. Y. J. Jeon, C. S. Kang, B. H. Lee, R. Nieh, and J. C. Lee, VLSI Technical Digest, p. 131 (2001).
- (2001) VLSI Technical Digest , pp. 131
- Onishi, K.¹ Kang, L.² Choi, R.³ Dharmarajan, E.⁴ Gopalan, S.⁵ Jeon, Y.J.⁶ Kang, C.S.⁷ Lee, B.H.⁸ Nieh, R.⁹ Lee, J.C.¹⁰

2
- 0034453464
- L. Kang, K. Onishi, Y. Jeon, B. H. Lee, C. S. Kang, W.-J. Qi, R. Nieh, S. Gopalan, R. Choi, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 2000, 35.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2000 , pp. 35
- Kang, L.¹ Onishi, K.² Jeon, Y.³ Lee, B.H.⁴ Kang, C.S.⁵ Qi, W.-J.⁶ Nieh, R.⁷ Gopalan, S.⁸ Choi, R.⁹ Lee, J.C.¹⁰

3
- 0005471559
- R. Choi, C. S. Kang, B. H. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan, and J. C. Lee, VLSI Technical Digest, p. 15 (2001).
- (2001) VLSI Technical Digest , pp. 15
- Choi, R.¹ Kang, C.S.² Lee, B.H.³ Onishi, K.⁴ Nieh, R.⁵ Gopalan, S.⁶ Dharmarajan, E.⁷ Lee, J.C.⁸

4
- 0035300661
- H.-J. Cho, D.-G. Park, I.-S. Yeo, J.-S. Roh, and J. W. Park, Jpn. J. Appl. Phys., Part 1. 40, 2814 (2001).
- (2001) Jpn. J. Appl. Phys., Part 1 , vol.40 , pp. 2814
- Cho, H.-J.¹ Park, D.-G.² Yeo, I.-S.³ Roh, J.-S.⁴ Park, J.W.⁵

5
- 79956030489
- C. S. Kang, H. J. Cho, K. Onishi, R. Nieh, R. Choi, S. Gopalan, S. Krishnan, J. H. Han, and J. C. Lee, Appl. Phys. Lett., 81, 2593 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 2593
- Kang, C.S.¹ Cho, H.J.² Onishi, K.³ Nieh, R.⁴ Choi, R.⁵ Gopalan, S.⁶ Krishnan, S.⁷ Han, J.H.⁸ Lee, J.C.⁹

6
- 8344277778
- H. J. Cho, C. S. Kang, K. Onishi, S. Gopalan, R. Nieh, R. Choi, E. Dharmarajan, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 2001, 6552001.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2001 , pp. 6552001
- Cho, H.J.¹ Kang, C.S.² Onishi, K.³ Gopalan, S.⁴ Nieh, R.⁵ Choi, R.⁶ Dharmarajan, E.⁷ Lee, J.C.⁸

7
- 0001188528
- L. M. Terman, Solid-State Electron., 5, 285 (1962).
- (1962) Solid-state Electron. , vol.5 , pp. 285
- Terman, L.M.¹

8
- 0037338856
- J. C. Wang, D. C. Shie, T. F. Lei, and C. L. Lee, Electrochem. Solid-State Lett., 6, F34 (2003).
- (2003) Electrochem. Solid-state Lett. , vol.6
- Wang, J.C.¹ Shie, D.C.² Lei, T.F.³ Lee, C.L.⁴

9
- 0012556542
- I. Rahat and J. Shappir, J. Appl. Phys., 76, 2279 (1994).
- (1994) J. Appl. Phys. , vol.76 , pp. 2279
- Rahat, I.¹ Shappir, J.²

10
- 0000163330
- S. Saha and S. B. Krupanidhi, J. Appl. Phys., 88, 3506 (2000).
- (2000) J. Appl. Phys. , vol.88 , pp. 3506
- Saha, S.¹ Krupanidhi, S.B.²

11
- 0036932242
- C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet., 2002, 857.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2002 , pp. 857
- Choi, C.H.¹ Rhee, S.J.² Jeon, T.S.³ Lu, N.⁴ Sim, J.H.⁵ Clark, R.⁶ Niwa, M.⁷ Kwong, D.L.⁸

12
- 8344240965
- C. S. Kang, H. J. Cho, K. Onishi, R. Choi, R. Nieh, S. Gopalan, S. Krishnan, and J. C. Lee, VLSI Simposium Technical Digest, p. 88 (2002).
- (2002) VLSI Simposium Technical Digest , pp. 88
- Kang, C.S.¹ Cho, H.J.² Onishi, K.³ Choi, R.⁴ Nieh, R.⁵ Gopalan, S.⁶ Krishnan, S.⁷ Lee, J.C.⁸

13
- 0038712510
- C. H. Choi, T. S. Jeon, R. Clark, and D. L. Kwong, IEEE Electron Device Lett., 24, 215 (2003).
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 215
- Choi, C.H.¹ Jeon, T.S.² Clark, R.³ Kwong, D.L.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.