Deep centres in bulk MOCVD n-type hexagonal GaN thin films and near their interface

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 911-915

  Muret, P ^a   Philippe, A ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE TRANSIENT; CAPTURE CROSS SECTIONS; CAPTURE KINETICS; HEXAGONAL GAN; HIGH-RESOLUTION METHODS; IONISATION ENERGIES; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; TRANSIENT SPECTROSCOPY;

GALLIUM NITRIDE; IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; TRANSIENTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 84875088573     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306255     Document Type: Conference Paper

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