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Volumn 189-190, Issue , 1998, Pages 541-545

Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN

Author keywords

Deep levels; DLTS; GaN; ICTS

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; LUMINESCENCE OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOIONIZATION; PHOTONS;

EID: 0032090776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00189-4     Document Type: Article
Times cited : (21)

References (19)
  • 11
    • 0346589401 scopus 로고    scopus 로고
    • PhD Thesis, Nagoya University
    • T. Detchprohm, PhD Thesis, Nagoya University, 1996.
    • (1996)
    • Detchprohm, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.