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Volumn 95-96, Issue , 2004, Pages 447-452

Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon

b INSTITUTE OF SOLID STATE PHYSICS (Russian Federation)

Author keywords

Deep Level Transient Spectroscopy (DLTS); Dislocations; Metallic Impurities; Silicon; Suicide Precipitates; Transmission Electron Microscopy

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ENERGY DISPERSIVE SPECTROSCOPY; NICKEL COMPOUNDS; NUCLEATION; OXIDATION; PLASTIC DEFORMATION; PRECIPITATION (CHEMICAL); SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GLIDE DISLOCATIONS; METALLIC IMPURITIES;

DISLOCATIONS (CRYSTALS);

EID: 1642560894 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (5)

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