Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Journal of Crystal Growth

Volumn 284, Issue 1-2, 2005, Pages 20-27

  Lei, W ^a   Chen, Y H ^a   Wang, Y L ^a   Xu, B ^a   Ye, X L ^a   Zeng, Y P ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Annealing; A1. Dislocations; A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wires; B2. Semiconducting III V material

Indexed keywords

ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM WIRES; THERMOANALYSIS;

DISLOCATIONS; ELECTRICAL PROPERTIES; SEMICONDUCTING III V MATERIALS; THERMAL ANNEALING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 25144513413     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.06.050     Document Type: Article

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