Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dots

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 166-171

  Songmuang, R ^a,b   Kiravittaya, S ^a,b   Sawadsaringkarn, M ^b   Panyakeow, S ^b   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

A1. Photoluminescence; A3. Self assembled quantum dots; B1. InAs

Indexed keywords

COMPOSITION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

MATERIAL INTERMIXING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037380527     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02474-0     Document Type: Conference Paper

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