Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (7 7 5)B-oriented InP substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 269-275

  Ohno, Yasuhide ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

B1. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

SELF-ORGANIZED STRUCTURES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0037380595     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02468-5     Document Type: Conference Paper

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