Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (0 0 1) InP substrate by MOCVD

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 8, Issue 3, 2000, Pages 290-295

  Wang, Benzhong ^a   Chua, Soo Jin ^a   Wang, Zhijie ^a   Liu, Shiyong ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

FULL-WIDTH AT HALF-MAXIMUM; SELF-ORGANIZED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034275907     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00122-3     Document Type: Article

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