Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 11, 2002, Pages 6813-6818

  Zhang, X Q ^a   Ganapathy, Sasikala ^a   Kumano, Hidekazu ^a   Uesugi, Kasturi ^a   Suemune, Ikuo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS; STRAIN; SUBSTRATES;

STRAIN COMPENSATING LAYERS (SCL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036905890     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516873     Document Type: Article

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