Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

Solid State Communications

Volumn 133, Issue 1, 2005, Pages 65-70

  Lee, K H ^a   Lee, J Y ^a   Lee, D U ^b   Kim, T W ^b   Lee, H S ^c   Kim, M D ^d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c Kyungpook National University   (South Korea)

^d Chungnam National University   (South Korea)

Author keywords

A. Nanostructures; B. Crystal growth; C. Transmission electron microscopy; D. Optical properties

Indexed keywords

ANNEALING; CRYSTAL GROWTH; INDIUM COMPOUNDS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURES; BUFFER LAYERS; INTERBAND TRANSITIONS; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 10444242667     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.08.010     Document Type: Article

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