Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3382-3384

  Girard, J F ^a   Dion, C ^b   Desjardins, P ^b   Ni Allen C ^a   Poole, P J ^a   Raymond, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; FOURIER TRANSFORMS; INTERDIFFUSION (SOLIDS); NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POINT DEFECTS; RAPID THERMAL ANNEALING; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL-BEAM EPITAXY (CBE); EMISSION ENERGIES; LUMINESCENCE EMISSION; QUANTUM DISKS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2542507399     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1715141     Document Type: Article

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