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Journal of Crystal Growth

Volumn 244, Issue 2, 2002, Pages 136-141

Influence of strain on annealing effects of In(Ga)As quantum dots

(6) Zhang, Y C a,b Wang, Z G a Xu, B a Liu, F Q a Chen, Y H a Dowd, Philip b

a INSTITUTE OF SEMICONDUCTORS (China)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

A1. Low dimensional structures; A1. Strain; A3. Molecular bram epitaxy; A3. Quantum dots

Indexed keywords

ANNEALING; DIFFUSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM;

LOW DIMENSIONAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036776474 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01614-7 Document Type: Article

Times cited : (16)

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