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Materials Science Forum

Volumn 475-479, Issue III, 2005, Pages 1897-1900

Polarized photoluminescence and temperature-dependent photoluminescence study of InAs quantum wires on InP (001)

(8) Lei, W a Chen, Y H a Wang, Y L a Ye, X L a Jin, P a Xu, B a Zeng, Y P a Wang, Z G a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

InAs quantum wires; InP; Polarized photoluminescence; Temperature dependent photoluminescence

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; INDIUM COMPOUNDS; LIGHT POLARIZATION; MONOLAYERS; PHOTOLUMINESCENCE; PHOTONS; QUENCHING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

INAS QUANTUM WIRES; INP; POLARIZED PHOTOLUMINESCENCE (PPL); TEPERATURE-DEPENDENT PHOTOLUMINESCENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 17044414104 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-960-1.1897 Document Type: Conference Paper

Times cited : (1)

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