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Volumn 591, Issue 1-3, 2005, Pages 117-132

Molecular-beam-epitaxy grown InAs islands on nominal and vicinal GaAs(2 5 11)A surfaces

Author keywords

Faceting; Gallium arsenide; High index single crystal surfaces; Indium arsenide; Molecular beam epitaxy; Photoluminescence; Quantum dots; Scanning tunneling microscopy

Indexed keywords

INDIUM COMPOUNDS; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY;

EID: 25144486254     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.06.026     Document Type: Article
Times cited : (3)

References (38)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.