Surface evolution in GaAs(1 1 0) homoepitaxy; from microscopic to macroscopic morphology

Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 33-46

  Holmes, D M ^a   Tok, E S ^a   Sudijono, J L ^a   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

EX SITU NOMARSKI INTERFERENCE OPTICAL MICROSCOPY; FLUX RATIO; HOMOEPITAXY; SUBSTRATES TEMPERATURE;

FILM GROWTH;

EID: 0032474971     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00449-7     Document Type: Article

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