Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces

Microelectronics Journal

Volumn 30, Issue 4, 1999, Pages 419-425

  Sanguinetti, S ^a   Miotto, A ^a   Castiglioni, S ^a   Grilli, E ^a   Guzzi, M ^a   Henini, M ^b   Polimeni, A ^b   Patane A ^b   Eaves, L ^b   Main, P C ^b  

^a Istituto Nazionale per la Fisica della Materia Milan   (Italy)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; LIGHT EMISSION; LIGHT POLARIZATION; MONOLAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032667518     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00146-3     Document Type: Article

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