Effect of high-voltage sheath electric field and ion-enhanced etching on growth of carbon nanofibers in high-density plasma chemical-vapor deposition

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Wei, H W ^a   Leou, K C ^a   Wei, M T ^a   Lin, Y Y ^a   Tsai, C H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; CARBON NANOFIBERS (CNF); FLOATING SPHERE MODEL; ION-ENHANCED ETCHING;

ELECTRIC POTENTIAL; ELECTROSTATICS; ETCHING; INDUCTIVELY COUPLED PLASMA; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SYNTHESIS (CHEMICAL);

ELECTRIC FIELDS;

EID: 25144482847     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1993776     Document Type: Article

References (38)

1. W. B. Choi, Appl. Phys. Lett. 78, 1547 (2001).
2. C. Niu, E. K. Sichel, R. Hoch, D. Moy, and H. Tennent, Appl. Phys. Lett. 70, 1480 (1997).
3. R. Saito G. Dresselhaus, and M. S. Dresslhaus, Physical Properties of Carbon Nanotubes (Imperial College Press, London, 1998).
4. F. L. Darkrim, P. Malbrunot, and G. P. Tartaglia, Int. J. Hydrogen Energy 27, 193 (2002).
5. M. A. Guillorn, A. V. Melechko, V. I. Merkulov, E. D. Ellis, and M. L. Simpson, J. Vac. Sci. Technol. B 19, 2598 (2001).
6. L. Delzeit and I. McAninch, J. Appl. Phys. 91, 6027 (2002).
7. L. Valentini and J. M. Kenny, J. Appl. Phys. 92, 6188 (2002).
8. V. I. Merkulov and A. V. Melechko, Appl. Phys. Lett. 80, 476 (2002).
9. V. I. Merkulov and D. H. Lowndes, Appl. Phys. Lett. 76, 3555 (2000).
10. P. H. Lin and C. R. Lin, Int. J. Mod. Phys. B 16, 853 (2002).
11. M. Chhowalla and K. B. K. Teo, J. Appl. Phys. 90, 5308 (2001).
12. Y. H. Wang and J. Lin, Appl. Phys. Lett. 79, 680 (2001).
13. S. Hofmann, C. Ducati, and J. Robertson, Appl. Phys. Lett. 83, 135 (2003).
14. J. B. O. Caughman, L. R. Baylor, M. A. Guillorn, V. I. Merkulov, D. H. Lowndes, and L. F. Allard, Appl. Phys. Lett. 83, 1207 (2003).
15. S. Honda, M. Katayama, K. Lee, T. Ikuno, S. Ohkura, K. Oura, H. Furuta, and T. Hirao, Jpn. J. Appl. Phys., Part 2 42, L441 (2003).
16. M. Okai, T. Muneyoshi, T. Yaguchi, and S. Sasaki, Appl. Phys. Lett. 77, 3468 (2000).
17. C. Bower and O. Zhou, Appl. Phys. Lett. 77, 2767 (2000).
18. C. Bower and W. Zhu, Appl. Phys. Lett. 77, 830 (2000).
19. Y. Zhang and A. Chang, Appl. Phys. Lett. 79, 3155 (2001).
20. V. I. Merkulov and A. V. Melechko, Appl. Phys. Lett. 79, 2970 (2001).
21. Y. S. Woo, D. Y. Jeon, I. T. Han, N. S. Lee, J. E. Jung, and J. M. Kim, Diamond Relat. Mater. 11, 59 (2002).
22. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 1994).
23. J. Cui and R. Fang, J. Appl. Phys. 81, 2856 (1997).
24. Y. Y. Lin, K. C. Leou, C. H. Tung, H. W. Wei, M. T. Wei, C. Lin, and C. H. Tsai, J. Appl. Phys. (submitted).
25. R. T. K. Baker, Carbon 27, 315 (1989).
26. V. I. Merkulov, M. A. Guilorn, D. H. Lowndes, and M. L. Simpson, Appl. Phys. Lett. 79, 1178 (2001).
27. Ch. Deschenauz, A. Affolter, D. Magni, Ch. Hollenstein, and P. Fayet, J. Phys. D 32, 1876 (1999).
28. M. Meyyappan, I. Delzeit, A. Cassell, and D. Hash, Plasma Sources Sci. Technol. 12, 205 (2003).
29. C. H. Weng, K. C. Leou, H. W. Wei, Z. Y. Juang, M. T. Wei, C. H. Tung, and C. H. Tsai, Appl. Phys. Lett. 85, 4732 (2004).
30. H. Yamaguchi, S. Sobhanian, M. Goto, S. Morita, K. Kawahata, and K. Sasaki, Jpn. J. Appl. Phys., Part 1 42, 7080 (2003).
31. D. J. Griffiths, Introduction to Electrodynamics (Prentice-Hall, Englewood Cliffs, NJ, 1999).
32. R. G. Forbes, C. J. Edgcombe, and U. Valdre, Ultramicroscopy 95, 57 (2003).
33. J. M. Bonard, N. Weiss, H. Kind, T. Stöckli, L. Forró, K. Kern, and A. Châtelain, Adv. Mater. (Weinheim, Ger.) 13, 184 (2001).
34. B. Chapman, Glow Discharge Processes (Wiley-Interscience, New York, 1980).
35. Y. H. Wang, J. Lin, and C. H. A. Huan, Thin Solid Films 405, 243 (2002).
36. K. Ryu, M. Kang, Y. Kim, and H. Jeon, Jpn. J. Appl. Phys., Part 1 42, 3578 (2003).
37. W. Jin and H. H. Sawin, J. Vac. Sci. Technol. A 21, 911 (2003).
38. J. P. Chang and J. W. Cobum, J. Vac. Sci. Technol. A 21, s145 (2003).