Growth of multiwall carbon nanotubes in an inductively coupled plasma reactor

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 6027-6033

  Delzeit, Lance ^a   McAninch, Ian ^a   Cruden, Brett A ^a   Hash, David ^a   Chen, Bin ^a   Han, Jie ^a   Meyyappan, M ^a  

^a NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS COMPOSITIONS; GLOBAL MODELS; HIGH DENSITY PLASMAS; INDUCTIVELY COUPLED PLASMA REACTOR; MULTI-LAYERED; PARAMETRIC STUDY; SILICON SUBSTRATES; VERTICALLY ALIGNED;

CATALYSTS; EMISSION SPECTROSCOPY; HYDROGEN; METHANE; MULTIWALLED CARBON NANOTUBES (MWCN); RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

INDUCTIVELY COUPLED PLASMA;

EID: 0036572528     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1465101     Document Type: Article

References (25)

1. M. Su, B. Zheng, and J. Liu, Chem. Phys. Lett. 322, 321 (2000), and references therein. cph CHPLBC 0009-2614
2. L. Delzeit, B. Chen, A. M. Cassell, C. Nguyen, and M. Meyyappan, Chem. Phys. Lett. 348, 368 (2001), and references therein. cph CHPLBC 0009-2614
3. Y. Chen, Z. L. Wang, J. S. Yin, D. J. Johnson, and R. H. Prince, Chem. Phys. Lett. 272, 178 (1997). cph CHPLBC 0009-2614
4. L. C. Qin, D. Zhou, A. R. Krauss, and D. M. Gruen, Appl. Phys. Lett. 72, 3437 (1998). apl APPLAB 0003-6951
5. Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Siegel, and P. N. Provencio, Science 282, 1105 (1998). sci SCIEAS 0036-8075
6. S. H. Tsai, C. W. Chao, C. L Lee, and H. C Shin, Appl. Phys. Lett. 74, 3462 (1999). apl APPLAB 0003-6951
7. Q. Zhang, S. F. Yoon, J. Ahn, B. Gan, Rusli, and M. B. Yu, J. Phys. Chem. Solids 61, 1179 (2000). jpx JPCSAW 0022-3697
8. Y. C. Choi, Y. H. Lee, B. S. Lee, G. Park, W. B. Choi, N. S. Lee, and J. M. Kim, J. Vac. Sci. Technol. A 18, 1864 (2000). jva JVTAD6 0734-2101
9. Y. C. Choi, Y. M. Shin, S. C. Lim, D. J. Bae, Y. H. Lee, B. S. Lee, and D. Chung, J. Appl. Phys. 88, 4898 (2000). jap JAPIAU 0021-8979
10. M. Okai, T. Muneyoshi, T. Yaguchi, and S. Sasaki, Appl. Phys. Lett. 77, 3465 (2000). apl APPLAB 0003-6951
11. V. I. Merkulov, D. H. Lowndes, Y. Y. Wei, G. Eres, and E. Voelkl, Appl. Phys. Lett. 76, 3555 (2000). apl APPLAB 0003-6951
12. G. W. Ho, A. T. S. Wee, J. Lin, and W. C. Tjiu, Thin Solid Films 388, 73 (2001). tsf THSFAP 0040-6090
13. K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. G. Hasko, G. Pirio, P. Legagneux, F. Wyczisk, and D. Pribat, Appl. Phys. Lett. 79, 1534 (2001). apl APPLAB 0003-6951
14. C. Bower, W. Zhu, S. Jin, and O. Zhou, Appl. Phys. Lett. 77, 830 (2000). apl APPLAB 0003-6951
15. J. Kong, H. T. Soh, A. M. Cassell, C. F. Quate, and H. Dai, Nature (London) 395, 878 (1998). nat NATUAS 0028-0836
16. H. Kanzow and A. Ding, Phys. Rev. B 60, 11180 (1999). prb PRBMDO 0163-1829
17. S. B. Sinnott, R. Andrews, D. Qian, A. M. Rao, Z. Mao, E. C. Dickey, and F. Derbyshire, Chem. Phys. Lett. 315, 25 (1999). cph CHPLBC 0009-2614
18. Y. Avigal and R. Kalish, Appl. Phys. Lett. 78, 2291 (2001). apl APPLAB 0003-6951
19. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 1994).
20. M. Meyyappan and T. R. Govindan, SAMPR: A Computer Code for Simple Analysis of Materials Processing Reactors, NASA Research Publication 1402, NASA (1997).
21. S. Panda, D. J. Economou, and M. Meyyappan, J. Appl. Phys. 87, 8323 (2000). jap JAPIAU 0021-8979
22. L. Delzeit, C. V. Nguyen, B. Chen, R. Stevens, A. Cassell, J. Han, and M. Meyyappan, J. Phys. Chem. B (to be published).
23. D. Nolan, D. C. Lynch, and A. H. Cutler, J. Phys. Chem. B 102, 4165 (1998). bfk JPCBFK 1089-5647
24. C. Thomsen, Phys. Rev. B 61, 4542 (2000). prb PRBMDO 0163-1829
25. Y. Y. Wei, G. Eres, V. I. Merkulov, and D. H. Lowndes, Appl. Phys. Lett. 78, 1394 (2001).