Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments

Physica Scripta

Volumn 69, Issue 5, 2004, Pages 376-384

  Lazanu, S ^a   Lazanu, I ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRONIC STRUCTURE; IRRADIATION; LATTICE CONSTANTS; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; PARAMETER ESTIMATION; RADIATION EFFECTS; THERMODYNAMICS;

BULK MATERIALS; CHARGE COLLECTION EFFICIENCY (CCE); DOPING IMPURITIES; INTERSTITIAL DEFECTS;

SILICON;

EID: 2442716747     PISSN: 00318949     EISSN: None     Source Type: Journal    
DOI: 10.1238/Physica.Regular.069a00376     Document Type: Article

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