Annealing of radiation-induced defects in silicon in a simplified phenomenological model

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 183, Issue 3-4, 2001, Pages 383-390

  Lazanu, S ^a   Lazanu, I ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

Annealing processes; Atom displacements; Kinetics of defects; Pions; Radiation damage

Indexed keywords

ANNEALING; APPROXIMATION THEORY; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFERENTIAL EQUATIONS; IONIZATION; IRRADIATION; RADIATION DAMAGE;

RADIATION-INDUCED DEFECTS;

SEMICONDUCTING SILICON;

EID: 0035478050     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00767-4     Document Type: Article

References (17)