The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 201, Issue 3, 2003, Pages 491-502

  Lazanu, I ^a   Lazanu, S ^b  

^a UNIVERSITY OF BUCHAREST   (Romania)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Annealing processes; Detectors; Kinetics of defects; Radiation damage; Slicon

Indexed keywords

ANNEALING; IRRADIATION; RADIATION DAMAGE; SILICON;

IRRADIATION CONDITIONS;

PARTICLE DETECTORS;

EID: 0037369979     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01811-6     Document Type: Article

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