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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 121-125

Defect engineering in Czochralski silicon by electron irradiation at different temperatures

(7) Lindstrom J L a Murin, L I b Hallberg, T c Markevich, V P b,d Svensson, B G e Kleverman, M a Hermansson, J a

a LUND UNIVERSITY (Sweden)

b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS (Belarus)

c SWEDISH DEFENCE RESEARCH AGENCY (Sweden)

d UNIVERSITY OF MANCHESTER (United Kingdom)

e ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Carbon; Defects; Electron irradiation; Oxygen; Silicon

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DOSIMETRY; ELECTRON IRRADIATION; ISOTOPES; LIGHT ABSORPTION; RADIATION EFFECTS; THERMAL EFFECTS;

CZOCHRALSKI (CZ) SILICON;

SEMICONDUCTING SILICON;

EID: 0036135055 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00871-0 Document Type: Article

Times cited : (67)

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