Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 514, Issue 1-3, 2003, Pages 9-17

  Lazanu, S ^a   Lazanu, I ^b   Bruzzi, M ^c  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF BUCHAREST   (Romania)

^c UNIVERSITY OF FLORENCE   (Italy)

Author keywords

Annealing processes; Bulk defects; Defect concentrations; Kinetics of defects; Radiation damage

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; MICROSCOPIC EXAMINATION; PARTICLE ACCELERATORS; PARTICLE DETECTORS; RADIATION DAMAGE; RADIATION HARDENING; REACTION KINETICS;

INTERSTITIAL ANNIHILATION;

SILICON;

EID: 0242691891     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.08.078     Document Type: Conference Paper

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