Growth of the AlN nano-pillar crystal films by means of a halide chemical vapor deposition under atmospheric pressure

Materials Chemistry and Physics

Volumn 86, Issue 1, 2004, Pages 74-77

  Yoshioka, Masayuki ^a   Takahashi, Naoyuki ^b   Nakamura, Takato ^b  

^a Industrial Research Institute of Shizuoka Prefecture   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

AlN; Aluminum nitride; AP HCVD; Nano pillar crystal; X ray pole figure analysis

Indexed keywords

ALUMINUM NITRIDE; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CRYSTALS; HALIDE MINERALS; NANOSTRUCTURED MATERIALS; ROTATION; SILICON COMPOUNDS; STRUCTURAL ANALYSIS; X RAY ANALYSIS;

AIN; AP-HCVD; CRYSTAL FILMS; NANO-PILLAR CRYSTAL; X-RAY POLE FIGURE ANALYSIS;

THIN FILMS;

EID: 2442715308     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2004.02.006     Document Type: Article

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