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Journal of Materials Science

Volumn 31, Issue 10, 1996, Pages 2609-2613

Effect of annealing on the structure and electrical properties of sulfur-doped amorphous c-BN layers

(7) Szmidt, J a Werbowy, A a Jarzebowski L a Gebicki, T a Petrakova, I b Sokolowska A a Olszyna, A a

a WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

b MENDELEEV UNIVERSITY OF CHEMICAL TECHNOLOGY OF RUSSIA (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; FILM GROWTH; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; SULFUR; THERMAL EFFECTS;

REACTIVE PULSE PLASMA METHOD;

CUBIC BORON NITRIDE;

EID: 0030143399 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1007/BF00687290 Document Type: Article

Times cited : (18)

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