Growth of tin nitride thin films by atmospheric pressure chemical vapor deposition using a halide source

Journal of Materials Science Letters

Volumn 20, Issue 3, 2001, Pages 227-228

  Takahashi, N ^a   Terada, K ^a   Nakamura, T ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HALOGEN COMPOUNDS; QUARTZ; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION;

TIN COMPOUNDS;

EID: 0035246808     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006742600345     Document Type: Article

References (16)