Effect of carrier gas in chemical vapor deposition of FeN film using FeCl3

Journal of Materials Science Letters

Volumn 19, Issue 15, 2000, Pages 1303-1304

  Toda, Y ^a   Takahashi, N ^a   Nakamura, T ^a   Momose, Y ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FILM GROWTH; GLASS; IRON COMPOUNDS; MAGNETIC HYSTERESIS; MAGNETIZATION; MAGNETOMETERS; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ATMOSPHERIC PRESSURE HALIDE CHEMICAL VAPOR DEPOSITION (AP-HCVD); CARRIER GAS; VIBRATING SAMPLE MAGNETOMETERS (VSM);

DIELECTRIC FILMS;

EID: 0034246879     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006701025277     Document Type: Article

References (4)

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3. N. TAKAHASHI, Y. TODA, T. NAKAMURA and T. FUJII, Jpn. J. Appl. Phys. 38 (1999) 6031.
4. O. MIZUNO and H. WATANABE, J. Cryst. Growth 30 (1975) 240.