Growth mechanism of FeN films by means of an atmospheric pressure halide chemical vapor deposition

Materials Chemistry and Physics

Volumn 65, Issue 1, 2000, Pages 113-116

  Takahashi, N ^a   Toda, Y ^a   Ishibashi, A ^a   Nakamura, T ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HYDROGEN; IRON COMPOUNDS; MAGNETIC PROPERTIES; PARTIAL PRESSURE;

IRON NITRIDE;

MAGNETIC FILMS;

EID: 0033752554     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00224-8     Document Type: Article

References (9)

1. Oyama S.T. J. Solid-State Chem. 96:1992;442.
2. Haneda K. Can. J. Phys. 65:1987;1233.
3. Kano A., Kazama N.S., Fujimori H. J. Appl. Phys. 53:1982;8332.
4. T. Tanaka, A. Kodama, M. Takahashi, T. Yakiyama, S. Iizuka, R. Hatakeyama, N. Sato, 14th Conf. Mag. Soc. Jpn., 1990, 11aC-10 (in Japanese).
5. Miyamoto H., Niihara T., Sukeda H., Takahashi M., Nakao T., Ojima M., Ohta N. J. Appl. Phys. 66:1989;6138.
6. Takahashi N., Toda Y., Nakamura T., Fujii T. Jpn. J. Appl. Phys. 38:1999;6031.
7. Matar S., Siberchicot B., Penicaud M., Demazeau G. J. Phys. 12:1992;1819.
8. JCPDS File No. 1-1236, 1990.
9. Mizuno O., Watanabe H. J. Cryst. Growth. 30:1975;240.