Preparation and properties of GaN films on GaAs substrates

Chinese Physics Letters

Volumn 21, Issue 5, 2004, Pages 955-958

  Yang, Ying Ge ^a   Ma, Hong Lei ^b   Ma, Jin ^b   Zhang, Ya Fei ^a  

^a Shanghai Jiao Tong University   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; FILM PREPARATION; GALLIUM ARSENIDE; GALLIUM NITRIDE; PHOTOLUMINESCENCE;

BAND-EDGE EMISSIONS; BLUE PHOTOLUMINESCENCE; GAAS SUBSTRATES; GALLIUM NITRIDE FILMS; GAN FILM; HEXAGONAL STRUCTURES; POLYCRYSTALLINE; POST-NITRIDATION; PROPERTY; UV PHOTOLUMINESCENCE;

III-V SEMICONDUCTORS;

EID: 2442711209     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/5/054     Document Type: Article

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