A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 642-645

  Horng, R H ^a   Wuu, D S ^a   Wei, S C ^a   Chan, S H ^b   Kung, C Y ^c  

^a DA YEH UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

GaN; Persistent photoconductivity; Sputtering

Indexed keywords

BAND STRUCTURE; MAGNETRON SPUTTERING; NITRIDES; PARTIAL PRESSURE; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTER DEPOSITION;

GALLIUM NITRIDE; PERSISTENT PHOTOCONDUCTIVITY (PPC);

SEMICONDUCTING FILMS;

EID: 0032662659     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01666-6     Document Type: Article

References (5)

1. G. Beadie, W.S. Rabinovich, A.E. Wickenden, D.D. Koleske, S.C. Binari, J.A. Freitas, Appl. Phys. Lett. 71 (1997) 1092.
2. C.H. Qiu, J.I. Pankove, Appl. Phys. Lett. 70 (1997) 1983.
3. D.C. Look, Semicond. Semimet. 19 (1983) 75.
4. O. Lagerstedt, B. Monemar, J. Appl. Phys. 45 (1974) 2266.
5. R.C. Powell, G.A. Tomasch, Y.-W. Kim, J.A. Thomton, J.E. Greene, Mater, Res. Soc. Symp. Proc. 162 (1990) 525.