Dynamics of below-band-gap carrier in highly excited gan

Chinese Physics Letters

Volumn 20, Issue 5, 2003, Pages 749-752

  Guo, Bing ^a,b   Wong, Kam Sing ^a   Ye, Zhi Zhen ^b   Jiang, Hong Xing ^c   Lin, Jing Yu ^c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b ZHEJIANG UNIVERSITY   (China)

^c KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PHONONS; WIDE BAND GAP SEMICONDUCTORS;

CARRIER DYNAMICS; DENSITY DEPENDENCE; ENERGY RELAXATION; FEMTOSECOND TIME-RESOLVED; GAN EPILAYERS; HOT-PHONON EFFECTS; MOTT DENSITY; PHOTO-CARRIERS; RISING-TIME; TIME-RESOLVED REFLECTIVITIES;

ENERGY GAP;

EID: 0037573335     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/5/345     Document Type: Article

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