MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 16-18

  Georgakilas, A ^a   Czigany, Zs ^b   Amimer, K ^a   Davydov, V Yu ^c   Toth, L ^b   Pecz, B ^b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

GaN; GaN on GaAs; MBE; Structure; TEM

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

RADIO-FREQUENCY NITROGEN PLASMA SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035933016     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00726-1     Document Type: Article

References (5)