Growth and properties of hexagonal GaN on GaAs(0 0 1) substrate by RF-molecular beam epitaxy using an AlAs nucleation layer

Journal of Crystal Growth

Volumn 212, Issue 3, 2000, Pages 391-396

  Liu, Hongfei ^a   Chen, H ^a   Li, Zhiqiang ^a   Wan, Li ^a   Huang, Q ^a   Jiunming Zhou, ^a   Yang, N ^c   Tao, Kun ^b   Han, Y J ^c   Luo, Y ^b  

^a INSTITUTE OF PHYSICS   (China)

^b TSINGHUA UNIVERSITY   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDING; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; HIGH RESOLUTION X RAY DIFFRACTION (HRXRD) ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0034188131     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00019-1     Document Type: Article

References (11)

1. Nakamura S., Senoh M., Iwase N., Nagahama S. Jpn. J. Appl. Phys. Part. 2(34):1995;L797.
2. Nakamura S., Senoh M., Iwase N., Nagahama S., Yamada T., Mukai T. Jpn. J. Appl. Phys. Part. 2(34):1995;L1332.
3. Nakamura S., Senoh M., Nagahama S., Iwase N., Yamada T., Matsusita T., Kiyoku H., Sugimoto Y. Jpn. J. Appl. Phys. Part. 2(35):1996;L74.
4. Akasaki I., Sota S., Sakai H., Tanaka T., Koike M., Amano H. Electron. Lett. 32:1996;1105.
5. Khan M.A., Kuznia J.N., Olson D.T. Appl. Phys. Lett. 60:1992;2917.
6. Mishra Umesh K. IEEE Trans. Microwave Theory Tech. 46(6):1998;756.
7. Ohtani A., Stevens K.S., Beresford R. Appl. Phys. Lett. 65:1992;61.
8. Moustakas T.D., Lei T., Molnar R.J. Physica B. 185:1993;36.
9. Yang J.W., Sun C.J., Anwar M.Z., Khan M.A., Nikishin A.A., Seryogin G.A., Osinsky A.V., Chernyak L., Temkin H., Hu C., Mahajan S. Appl. Phys. Lett. 69:1996;3566.
10. Giehier M., Ramsteiner M., Brandt O., Yang H., Ploog K.H. Appl. Phys. Lett. 67:1995;733.
11. Itoh N., Okamoto K. J. Appl. Phys. 1486:1988;63.