Nitroxyl free radical binding to Si(1 0 0): A combined scanning tunneling microscopy and computational modeling study

Surface Science

Volumn 559, Issue 1, 2004, Pages 16-28

  Greene, Mark E ^a   Guisinger, Nathan P ^a   Basu, Rajiv ^a   Baluch, Andrew S ^a   Hersam, Mark C ^a  

^a Northwestern University   (United States)

Author keywords

Density functional calculations; Molecule solid reactions; Scanning tunneling microscopy; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FREE RADICALS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICES; THERMODYNAMIC STABILITY; ULTRAHIGH VACUUM;

DENSITY FUNCTIONAL CALCULATIONS; ELECTRON STIMULATED DESORPTION; MOLECULE-SOLID REACTIONS; SURFACE ELECTRONIC PHENOMENA; SURFACE POTENTIAL; SURFACE STATES; WORK FUNCTION;

SILICON;

EID: 2442640651     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.04.012     Document Type: Article

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