Analysis of the reservoir effect on electromigration reliability

Microelectronics Reliability

Volumn 44, Issue 6, 2004, Pages 917-928

  Jeon, Insu ^a,c   Park, Young Bae ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Andong National University   (South Korea)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; ELECTRIC CURRENTS; FINITE ELEMENT METHOD; INTERCONNECTION NETWORKS; SILICATES;

ELECTROMIGRATION RELIABILITY; MEDIAN-TIME-TO-FAILURE (MTF); RESERVOIR LENGTHS; VACANCY CONCENTRATION;

ELECTROMIGRATION;

EID: 2442544627     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.02.001     Document Type: Article

References (31)

1. Le H.A., Ting L., Tso N.C., Kim C.U. Analysis of the reservoir length and its effect on electromigration lifetime. J. Mater. Res. 17:2002;167-171.
2. Dion MJ. Reservoir modeling for electromigration improvement of metal systems with refractory barriers. In: Proc IEEE Int Reliab Phys Symp, 2001. p. 327-33.
3. Dion MJ. Electromigration lifetime enhancement for lines with multiple branches. In: Proc IEEE Int Reliab Phys Symp, 2000. p. 324-32.
4. Skala S, Bothra S. Effects of W-plug via arrangement on electromigration lifetime of wide line interconnects. In: Proc IEEE Int Interconnect Technol Conf, 1998. p. 116-8.
5. Fujii M, Koyama K, Aoyama J. Reservoir length dependence of EM lifetime for Tungsten via chain under low current stress. In: Proc 13th Int VLSI Multilevel Interconnection Conf, 1996. p. 312-7.
6. Nguyen H.V., Salm C., Wenzel R., Mouthaan A.J., Kuper F.G. Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime. Microelectron. Reliab. 42:2002;1421-1425.
7. Nguyen HV, Salm C, Wenzel R, Mouthaan AJ, Kuper FG. Modelling of the reservoir effect on electromigration lifetime. In: Proc 8th Int Symposium on the Physical & Failure Analysis of Integrated Circuits, 2001. p. 169-73.
8. Nguyen HV, Salm C, Kuper FG, Mouthaan AJ. Simulations of reservoir effect in multilevel Al-based metallisation. In: Proc Safe/IEEE Workshop, 2000. p. 101-5.
9. Petrescu V., Mouthaan A.J., Schoenmaker W., Salm C. Mechanical stress evolution and the Blech length: 2D simulation of early electromigration effects. Microelectron. Reliab. 38:1998;1047-1050.
10. Shen Y.L., Guo Y.L., Minor C.A. Voiding induced stress redistribution and its reliability implications in metal interconnects. Acta Mater. 48:2000;1667-1678.
11. Shen Y.L. Stresses, deformation, and void nucleation in locally debonded metal interconnects. J. Appl. Phys. 84:1998;5525-5530.
12. Shi L.T., Tu K.N. Finite element stress analysis of failure mechanisms in a multilevel metallization structure. J. Appl. Phys. 77:1995;3037-3041.
13. Shi L.T., Tu K.N. Finite element modeling of stress distribution and migration in interconnecting studs of a three-dimensional multilevel device structure. Appl. Phys. Lett. 65:1994;1516-1518.
14. Hu C.K., Gignac L., Malhotra S.G., Rosenberg R. Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections. Appl. Phys. Lett. 78:2001;904-906.
15. Rosenberg R., Ohring M. Void formation and growth during electromigration in thin films. J. Appl. Phys. 42:1971;5671-5679.
16. Kirchheim R. Stress and electromigration in Al-line of integrated circuits. Acta Metall. Mater. 40:1992;309-323.
17. Sarychev M.E., Zhitnikov Y.V., Borucki L., Liu C.L., Makhviladze T.M. A new, general model for mechanical stress evolution during electromigration. Thin Solid Films. 65:2000;211-218.
18. Sarychev M.E., Zhitnikov Y.V., Borucki L., Liu C.L., Makhviladze T.M. General model for mechanical stress evolution during electromigration. J. Appl. Phys. 86:1999;3068-3075.
19. Clement J.J. Reliability analysis for encapsulated interconnect lines under dc and pulsed dc current using a continuum electromigration transport model. J. Appl. Phys. 82:1997;5991-6000.
20. Clement J.J., Thompson C.V. Modeling electromigration-induced stress evolution in confined metal lines. J. Appl. Phys. 78:1995;900-904.
21. Korhonen M.A., Borgesen P., Tu K.N., Li C.Y. Stress evolution due to electromigration in confined metal lines. J. Appl. Phys. 73:1993;3790-3799.
22. Clement J.J., Lloyd J.R. Numerical investigations of the electromigration boundary value problem. J. Appl. Phys. 71:1992;1729-1731.
23. Oliver W.C., Pharr G.M. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7:1992;1564-1583.
24. Park Y.B., Jeon I. Mechanical stress evolution in metal interconnects for various line aspect ratios and passivation dielectrics. Microelectron. Eng. 69:2003;26-36.
25. Gouldstone A., Shen Y.L., Suresh S., Thompson C.V. Evolution of stresses in passivated and unpassivated metal interconnects. J. Mater. Res. 13:1998;1956-1966.
26. Sauter A.I., Nix W.D. Thermal stress in Aluminum lines bonded to substrates. IEEE Trans. Comp. Hybrids Manufact. Technol. 15:1992;594-600.
27. Jeon I., Lee Y., Im S. Higher order eigenfields in mode II cracks under elastic-plastic deformation. KSME Int. J. 17:2003;254-268.
28. Jeon I., Im S. The role of higher order eigenfields in elastic-plastic crack. J. Mech. Phys. Solids. 49:2001;2789-2818.
29. Estabil JJ, Rathore HS, Levine EN. Electromigration improvements with titanium underlay and overlay in Al(Cu) metallurgy. In: Proc 7th Int IEEE VLSI Multilevel Interconnection Conf, 1991. p. 242-8.
30. Hosaka M, Kouno T, Hayakawa Y. Ti layer thickness dependence on electromigration performance of Ti/AlCu metallization. In: Proc IEEE Int Reliab Phys Symp, 1998. p. 329-34.
31. Park Y.B., Lee D.W. Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects. Mater. Sci. Eng. B. 87:2001;70-76.